NCEP02590T Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Super Trench Power MOSFET Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =250V,ID =90A RDS(ON) <15mΩ @ VGS=10V - Excellent gate charge x RDS(on) product - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - Optimized body diode reverse recovery performance Application - DC/DC Converter -...